Reference Only

IXFN132N50P3

MOSFET Modules 500V 112A 0.039Ohm PolarP3 Power MOSFET

Manufacturer:

Mfr Part:
IXFN132N50P3

TTI Part:
IXFN132N50P3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFET Modules
TechnologySi
Mounting StyleScrew Mount
Package / CaseSOT-227-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current112 A
Rds On - Drain-Source Resistance39 mOhms
Vgs - Gate-Source Voltage- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage5 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1.5 kW
SeriesIXFN132N50
PackagingTube
ConfigurationSingle
Fall Time8 ns
Product TypeMOSFET Modules
Rise Time9 ns
SubcategoryDiscrete and Power Modules
TradenameHiPerFET
TypeHiperFET

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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