Reference Only

IXFK24N100Q3

MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/24A

Manufacturer:

Mfr Part:
IXFK24N100Q3

TTI Part:
IXFK24N100Q3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-264-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current24 A
Rds On - Drain-Source Resistance440 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage3.5 V
Qg - Gate Charge140 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1 kW
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Product TypeMOSFETs
Rise Time300 ns
SeriesHiPerFET
SubcategoryTransistors
Transistor Type1 N-Channel

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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