Reference Only

IXFH60N65X2

MOSFETs MOSFET 650V/60A Ultra Junction X2

Manufacturer:

Mfr Part:
IXFH60N65X2

TTI Part:
IXFH60N65X2

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current60 A
Rds On - Drain-Source Resistance52 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage2.7 V
Qg - Gate Charge107 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation780 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time12 ns
Forward Transconductance - Min29 S
Product TypeMOSFETs
Rise Time40 ns
Series650V Ultra Junction X2
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time50 ns
Typical Turn-On Delay Time37 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead

Documents

EDA / CAD Models

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Lead Time: 39 Weeks
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$9.26$277.80
$8.89$533.40
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