Reference Only

IXFB30N120P

MOSFETs 30 Amps 1200V 0.35 Rds

Manufacturer:

Mfr Part:
IXFB30N120P

TTI Part:
IXFB30N120P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CasePLUS-264-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current30 A
Rds On - Drain-Source Resistance350 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage6.5 V
Qg - Gate Charge310 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1.25 kW
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time56 ns
Forward Transconductance - Min13 S
Product TypeMOSFETs
Rise Time60 ns
SeriesIXFB30N120P
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time95 ns
Typical Turn-On Delay Time57 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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