Reference Only

SIHG70N60EF-GE3

MOSFETs RECOMMENDED ALT SIHW

Manufacturer:

Mfr Part:
SIHG70N60EF-GE3

TTI Part:
SIHG70N60EF-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current70 A
Rds On - Drain-Source Resistance38 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge380 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation520 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Product TypeMOSFETs
SeriesSIHG EF
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

0In Stock

Available For Backorder
Lead Time: 18 Weeks
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Reel

(Minimum: 50 / Multiples: 50)
Quantity Unit PriceExt. Price
$10.38$519.00
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