Reference Only

SIHG33N65EF-GE3

MOSFETs 650V Vds 30V Vgs TO-247AC

Manufacturer:

Mfr Part:
SIHG33N65EF-GE3

TTI Part:
SIHG33N65EF-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current31.6 A
Rds On - Drain-Source Resistance109 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge171 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation313 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Product TypeMOSFETs
SeriesSIHG EF
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

0In Stock

Available For Backorder
Lead Time: 25 Weeks
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Reel

(Minimum: 25 / Multiples: 25)
Quantity Unit PriceExt. Price
$5.59$139.75
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