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SIHG080N60E-GE3

MOSFETs TO247 600V 35A N-CH MOSFET

Manufacturer:

Mfr Part:
SIHG080N60E-GE3

TTI Part:
SIHG080N60E-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247AC-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current35 A
Rds On - Drain-Source Resistance80 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge42 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation227 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time31 ns
Forward Transconductance - Min4.6 S
Product TypeMOSFETs
Rise Time96 ns
SeriesSIHG E
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time37 ns
Typical Turn-On Delay Time31 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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Technical Resources

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