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SIHFR420A-GE3

MOSFETs 500V Vds 30V Vgs DPAK (TO-252)

Manufacturer:

Mfr Part:
SIHFR420A-GE3

TTI Part:
SIHFR420A-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current3.3 A
Rds On - Drain-Source Resistance3 Ohms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge17 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation83 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time13 ns
Forward Transconductance - Min1.4 S
Product TypeMOSFETs
Rise Time12 ns
SeriesSIHFR
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time16 ns
Typical Turn-On Delay Time8.1 ns

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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