Reference Only

SIHF640S-GE3

MOSFETs 200V Vds 20V Vgs D2PAK (TO-263)

Manufacturer:

Mfr Part:
SIHF640S-GE3

TTI Part:
SIHF640S-GE3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage200 V
Id - Continuous Drain Current18 A
Rds On - Drain-Source Resistance180 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge70 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation130 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time36 ns
Forward Transconductance - Min6.7 S
Product TypeMOSFETs
Rise Time51 ns
SeriesSIHF
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time45 ns
Typical Turn-On Delay Time14 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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Lead Time: 38 Weeks
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