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IRLD024PBF

MOSFETs N-CH 60V HEXFET MOSFET HEXDI

Manufacturer:

Mfr Part:
IRLD024PBF

TTI Part:
IRLD024PBF

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseHVMDIP-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current2.5 A
Rds On - Drain-Source Resistance100 mOhms
Vgs - Gate-Source Voltage- 10 V, 10 V
Vgs th - Gate-Source Threshold Voltage1 V
Qg - Gate Charge18 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation1.3 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time41 ns
Forward Transconductance - Min3.7 S
Product TypeMOSFETs
Rise Time110 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time23 ns
Typical Turn-On Delay Time11 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

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EDA / CAD Models

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Lead Time: 52 Weeks
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Tube

(Minimum: 2,500 / Multiples: 2,500)
Quantity Unit PriceExt. Price
$0.82$2,050.00
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