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IRFPG50PBF

MOSFETs N-CH 1000V HEXFET MOSFET

Manufacturer:

Mfr Part:
IRFPG50PBF

TTI Part:
IRFPG50PBF

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current6.1 A
Rds On - Drain-Source Resistance2 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge190 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation190 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time36 ns
Forward Transconductance - Min5.4 S
Product TypeMOSFETs
Rise Time35 ns
SeriesIRFPG
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time130 ns
Typical Turn-On Delay Time19 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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