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IRFIB5N65APBF

End of Life
MOSFETs N-CH 650V HEXFET MOSFET

Manufacturer:

Mfr Part:
IRFIB5N65APBF

TTI Part:
IRFIB5N65APBF

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current5.1 A
Rds On - Drain-Source Resistance930 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge48 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation60 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Product TypeMOSFETs
SeriesIRFIB
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290095
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption Number7a
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

1,000In Stock

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(Minimum: 1,000 / Multiples: 1,000)
Quantity Unit PriceExt. Price
$1.58$1,580.00
$1.47$2,940.00
$1.40$7,000.00
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