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IRFD120PBF

MOSFETs 100V N-CH HEXFET HEXDI

Manufacturer:

Mfr Part:
IRFD120PBF

TTI Part:
IRFD120PBF

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseHVMDIP-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current1.3 A
Rds On - Drain-Source Resistance270 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge16 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation1.3 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time17 ns
Forward Transconductance - Min0.8 S
Product TypeMOSFETs
Rise Time27 ns
SeriesIRFD
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time18 ns
Typical Turn-On Delay Time6.8 ns

Export and Environmental Classification

AttributeDescription
Country of OriginPhilippines
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

Technical Resources

EDA / CAD Models

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Lead Time: 52 Weeks
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(Minimum: 2,500 / Multiples: 2,500)
Quantity Unit PriceExt. Price
$0.76$1,900.00
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