Reference Only

IRFD110PBF

End of Life
MOSFETs N-CH 100V HEXFET MOSFET HEXDI

Manufacturer:

Mfr Part:
IRFD110PBF

TTI Part:
IRFD110PBF

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseHVMDIP-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current1 A
Rds On - Drain-Source Resistance540 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge8.3 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation1.3 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time9.4 ns
Forward Transconductance - Min0.8 S
Product TypeMOSFETs
Rise Time16 ns
SeriesIRFD
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time15 ns
Typical Turn-On Delay Time6.9 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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