Reference Only

IXFN360N15T2

MOSFET Modules GigaMOS Trench T2 HiperFET PWR MOSFET

Manufacturer:

Mfr Part:
IXFN360N15T2

TTI Part:
IXFN360N15T2

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFET Modules
TechnologySi
Mounting StyleScrew Mount
Package / CaseSOT-227-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage150 V
Id - Continuous Drain Current310 A
Rds On - Drain-Source Resistance4 mOhms
Vgs - Gate-Source Voltage- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage5 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation1.07 mW
SeriesIXFN360N15
PackagingTube
ConfigurationSingle
Fall Time265 ns
Product TypeMOSFET Modules
Rise Time170 ns
SubcategoryDiscrete and Power Modules
TradenameHiPerFET
TypeGigaMOS Trench T2 HiperFet
Typical Turn-Off Delay Time115 ns
Typical Turn-On Delay Time50 ns
Vr - Reverse Voltage60 V

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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