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IXFN230N20T

MOSFET Modules 230A 200V

Manufacturer:

Mfr Part:
IXFN230N20T

TTI Part:
IXFN230N20T

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFET Modules
TechnologySi
Mounting StyleScrew Mount
Package / CaseSOT-227-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage200 V
Id - Continuous Drain Current220 A
Rds On - Drain-Source Resistance7.5 mOhms
Vgs - Gate-Source Voltage- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage3 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation1.09 mW
SeriesIXFN230N20
PackagingTube
ConfigurationSingle
Fall Time17 ns
Height12.22 mm
Length38.23 mm
Product TypeMOSFET Modules
Rise Time38 ns
SubcategoryDiscrete and Power Modules
TradenameHiPerFET
TypeGigaMOS Power MOSFET
Typical Turn-Off Delay Time62 ns
Typical Turn-On Delay Time58 ns
Width25.42 mm

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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